Texturizing a surface without bead blasting

ABSTRACT

A system to provide a texture to a surface of a component for use in a semiconductor processing chamber is provided. The system includes an enclosure comprising a processing region, a support disposed in the processing region, a photon light source to generate a stream of photons, an optical module operably coupled to the photon light source, and a lens. The optical module includes a beam modulator to create a beam of photons from the stream of photons generated from the photon light source, and a beam scanner to scan the beam of photons across the surface of the component. The lens is used to receive the beam of photons from the beam scanner and distribute the beam of photons at a wavelength in a range between about 345 nm and about 1100 nm across the surface of the component to form a plurality of features on the component.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.16/532,011 (Attorney Docket 24394USD01) filed Aug. 5, 2019, which is adivisional of U.S. patent application Ser. No. 15/955,503 (AttorneyDocket 24394USP01) filed Apr. 17, 2018, which is a continuation-in-partof U.S. patent application Ser. No. 15/729,360 (Attorney Docket 24394US)filed Oct. 10, 2017, which claims the benefit of U.S. Provisional Patentapplication Ser. No. 62/408,501 (Attorney Docket 24394USL) filed Oct.14, 2016, each of which is incorporated herein by reference.

BACKGROUND Field

Embodiments of the present disclosure generally relate to a method ofand a system and apparatus for texturizing a surface of a component foruse in a semiconductor processing chamber.

Description of the Related Art

As integrated circuit devices continue to be fabricated with reduceddimensions, the manufacture of these devices becomes more susceptible toreduced yields due to contamination. Consequently, fabricatingintegrated circuit devices, particularly those having smaller physicalsizes, requires that contamination be controlled to a greater extentthan previously considered to be necessary.

Contamination of integrated circuit devices may arise from sources suchas undesirable stray particles impinging on a substrate during thin filmdeposition, etching, or other semiconductor fabrication processes. Ingeneral, the manufacturing of the integrated circuit devices includesthe use of chambers, including, but not limited to, physical vapordeposition (PVD) sputtering chambers, chemical vapor deposition (CVD)chambers, and plasma etching chambers. During the course of depositionand etch processes, materials often condense from the gas phase ontovarious internal surfaces of the chamber and surfaces of chambercomponents disposed within the chamber. When the materials condense fromthe gas phase, the materials form solid masses that reside on thechamber and component surfaces. This condensed foreign matteraccumulates on the surfaces and is prone to detaching or flaking offfrom the surfaces during or in between a wafer process sequence. Thisdetached foreign matter may impinge upon and contaminate the wafer anddevices formed thereon. Contaminated devices frequently must bediscarded, thereby decreasing the manufacturing yield of the process.

In order to prevent detachment of foreign matter that has formed, theinternal surfaces of the chamber and the surfaces of chamber componentsdisposed within the chamber may be provided with a particular surfacetexture. The surface texture is configured such that the foreign matterthat forms on these surfaces has enhanced adhesion to the surface and isless likely to detach and contaminate a wafer. A key parameter of thesurface texture is the surface roughness.

One common texturizing process is bead blasting. In a bead blastingprocess, solid blasting beads are propelled towards the surface to betexturized. One manner in which the solid blasting beads can bepropelled towards the surface to be texturized is by pressurized gas.The solid blasting beads are made of a suitable material, for example,aluminum oxide, glass, silica, or hard plastics. Depending upon thedesired surface roughness, the blasting beads can be of varying sizesand shapes.

However, it can be difficult to control the uniformity and repeatabilityof the bead blasting process. Moreover, during the bead blastingprocess, the surface being texturized may become sharp and jagged suchthat tips of the surface break off because of the impact of the solidblasting beads, thereby introducing a source of contamination. Inaddition, the blasting beads may become entrapped or embedded within thesurface during the bead blasting process. For example, if the surfacebeing texturized includes a small through-hole of a varying width (e.g.,a gas distribution showerhead), the blasting bead may become entrappedwithin the through-hole. In such a situation, the blasting bead not onlyprevents the through-hole from functioning as a gas passageway, forexample, but it also introduces a potential source of contamination fora wafer.

An electromagnetic beam can also be used to texturize a chamber surface.Using an electromagnetic beam to texturize a chamber surface mayovercome some of the above-identified problems associated with beadblasting. However, the electromagnetic beam must be operated undervacuum to prevent scattering. Scattering can occur when electrons withinthe electromagnetic beam interact with air or other gas molecules.Consequently, the electromagnetic beam must be operated within a vacuumchamber. The need for a vacuum chamber limits the size of componentsthat can be texturized because the component must be able to fit withinthe vacuum chamber. Moreover, the capital costs associated withoperating an electromagnetic beam are significantly higher than thecapital costs associated with bead blasting process. For example, theneed for a vacuum chamber increases the costs associated with texturinga surface with an electromagnetic beam.

Therefore, there is a need for an improved texturizing process thatovercomes the problems associated with bead blasting while avoiding thecapital costs and size constraints associated with the use of anelectromagnetic beam.

SUMMARY

One implementation of the present disclosure relates to a method ofproviding a texture to a surface of a component for use in asemiconductor processing chamber. The method includes directing a beamof photons through ambient air or nitrogen at the surface of thecomponent; and scanning the beam of photons across a first region of thesurface of the component to form a plurality of features on the surfacewithin the first region, wherein the features that are formed aredepressions, protuberances, or combinations thereof.

Another implementation of the present disclosure relates to a method ofproviding a texture to a surface of a component for use in asemiconductor processing chamber. The method includes directing a beamof photons at the surface of the component in an atmosphere having apressure generally equivalent to atmospheric pressure; and scanning thebeam of photons across a first region of the surface of the component toform a plurality of features on the surface within the first region,wherein the features that are formed are depressions, protuberances, orcombinations thereof.

Another embodiment of the present disclosure is a component for use in asemiconductor processing chamber. The component includes a plurality offeatures on a surface within a first region, wherein the features thatare formed are depressions, protuberances, or combinations thereof. Thefeatures are formed by scanning a beam of photons across the surface ofthe component.

Another embodiment of the present disclosure is a system to provide atexture to a surface of a component for use in a semiconductorprocessing chamber is provided. The system includes an enclosurecomprising a processing region, a support disposed in the processingregion and comprising a supporting surface, a photon light source togenerate a stream of photons, an optical module operably coupled to thephoton light source to receive the stream of photons from the photonlight source, and a lens. The optical module includes a beam modulatorto create a beam of photons from the stream of photons generated fromthe photon light source, and a beam scanner to scan the beam of photonsacross the surface of the component. The lens is used to receive thebeam of photons from the beam scanner and distribute the beam of photonsat a wavelength in a range between about 345 nm and about 1100 nm acrossthe surface of the component to form a plurality of features on thecomponent.

Another embodiment of the present disclosure is a method of providing atexture to a surface of a component for use in a semiconductorprocessing chamber. The method includes generating a stream of photons,shaping the stream of photons into a beam, scanning the beam of photonsthrough a processing region that comprises a gas concentration ofambient air or nitrogen with a pressure generally equivalent toatmospheric pressure towards the surface of the component, anddistributing the beam of photons across the surface of the component toform a plurality of features on the surface.

Further, yet another embodiment of the present disclosure is a system toprovide a texture to a surface of a component for use in a semiconductorprocessing chamber. The system includes an enclosure comprising aprocessing region maintained as a Class 1 environment with a pressuregenerally equivalent to atmospheric pressure, a support disposed in theprocessing region and comprising a supporting surface, a photon lightsource to generate a stream of photons, an optical module operablycoupled to the photon light source to receive the stream of photons fromthe photon light source, and a lens. The optical module includes a beammodulator to create a beam of photons from the stream of photonsgenerated from the photon light source and a beam scanner to scan thebeam of photons across the surface of the component. The lens isdisposed in the processing region to receive the beam of photons fromthe beam scanner and distribute the beam of photons at a wavelength in arange between about 345 nm and about 1100 nm across the surface of thecomponent to form a plurality of features on the component.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toimplementations, some of which are illustrated in the appended drawings.It is to be noted, however, that the appended drawings illustrate onlyexemplary implementations and are therefore not to be consideredlimiting of its scope.

FIG. 1 illustrates a schematic view of a laser machine and a supportsystem in accordance with the present disclosure.

FIG. 2 illustrates an alternative schematic view of a laser machine anda support system in accordance with the present disclosure.

FIG. 3 illustrates a top view of a gas distribution showerhead, with aregion to be texturized marked by boundary lines, in accordance with thepresent disclosure.

FIG. 4 illustrates a process sequence for a method of operating a lasermachine and a support system in accordance with the present disclosure.

FIGS. 5 and 6 illustrate a surface morphology of a repeating randomform, the surface morphology being created by a laser machine inaccordance with the present disclosure. FIG. 5 illustrates a perspectiveview showing the surface morphology and FIG. 6 illustrates a top viewshowing the surface morphology.

FIGS. 7 and 8 illustrate a surface morphology of a repeating wave form,the surface morphology being created by a laser machine in accordancewith the present disclosure. FIG. 7 illustrates a perspective viewshowing the surface morphology and FIG. 8 illustrates top and side viewsshowing the surface morphology.

FIGS. 9 and 10 illustrate a surface morphology of a repeating squareform, the surface morphology being created by a laser machine inaccordance with the present disclosure. FIG. 9 illustrates a perspectiveview showing the surface morphology, and FIG. 10 illustrates top andside views showing the surface morphology.

FIG. 11 illustrates a schematic view of a laser machine and a laserdevice in accordance with the present disclosure.

FIG. 12 illustrates an alternative schematic view of a laser machine anda laser device in accordance with the present disclosure.

FIG. 13 shows a graphical view comparing results of componentstexturized using a bead blasting process and a process in accordancewith the present disclosure.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneimplementation may be beneficially incorporated in other implementationswithout further recitation.

The patent or application file contains at least one drawing executed incolor. Copies of this patent or patent application publication withcolor drawing(s) will be provided by the Office upon request and paymentof the necessary fee.

DETAILED DESCRIPTION

Implementations described herein utilize a beam of photons generated bya laser to perform a texturizing process on a surface of a component foruse in a semiconductor processing chamber. The beam of photons isdirected at the surface of the component and scanned across a region ofthe surface to form a plurality of features. The features formed on thesurface include depressions, protuberances, and/or combinations thereof.The beam of photons may be reduced in intensity, defocused, and/orscanned at a particular travel speed to form a desired surfacemorphology.

FIG. 1 depicts a schematic view of a laser machine 100 that may be usedto texturize a surface 103 of a component 104 and a support system 102.The component 104 may be, for example, a gas distribution showerhead, achamber wall, or an electrostatic chuck. The laser machine 100 comprisesa power supply 106, a controller 108, and a laser device 116. The laserdevice 116 outputs a beam of photons 112. The controller 108 maycomprise a modulator and/or a scanner to modulate and scan the beam ofphotons 112. The laser machine may further comprise a pulse supply unitto pulse the beam of photons 112. Pulsing the beam of photons 112 canhelp minimize the amount of heat applied to the surface 103 of thecomponent 104. In addition, pulsing the beam of photons 112 can helpreduce problems incurred as a result of the reflectivity of the surface103 of the component 104. Embodiments disclosed herein may be utilizedto texturize the surface 103 of the component 104 to have an arithmeticaverage of the roughness profile (Ra) of about 60 μin to about 360 μin.

The component 104 may comprise a material such as a metal or metalalloy, a ceramic material, a polymer material, a composite material, orcombinations thereof. In one implementation, the component 104 comprisesa material selected from the group comprising steel, stainless steel,tantalum, tungsten, titanium, copper, aluminum, nickel, gold, silver,aluminum oxide, aluminum nitride, silicon, silicon nitride, siliconoxide, silicon carbide, sapphire (Al₂O₃), silicon nitride, yttria,yttrium oxide, and combinations thereof. In one implementation, thecomponent 104 comprises metal alloys such as austenitic-type stainlesssteels, iron-nickel-chromium alloys (e.g., Inconel™ alloys),nickel-chromium-molybdenum-tungsten alloys (e.g., Hastelloy™), copperzinc alloys, chromium copper alloys (e.g., 5% or 10% Cr with balanceCu), or the like. In another implementation, the component comprisesquartz. The component 104 may also comprise polymers such as polyimide(Vespel™), polyetheretherketone (PEEK), polyarylate (Ardel™), and thelike. In yet another implementation, the component 104 may comprises amaterial such as gold, silver, aluminum silicon, germanium, germaniumsilicon, boron nitride, aluminum oxide, aluminum nitride, silicon,silicon nitride, silicon oxide, silicon carbide, yttria, yttrium oxide,non-polymers, and combinations thereof.

The support system 102 may be positioned downstream of the laser machine100. The support system 102 comprises a support 122, such as similar toa substrate support in one or more embodiments, for supporting component104. The support system 102 and laser machine 100 are positionedrelative to each other such that the beam of photons 112 output by thelaser device 116 is directed at the surface 103 of the component 104. Inone implementation of the present disclosure illustrated in FIG. 1, thelaser machine 100 may further comprise an actuating means 124 foradjusting the position of the output of the laser device 116. In such animplementation, the support 122 may remain stationary and the actuatingmeans 124 may adjust the position of output of the laser device 116,thereby causing the beam of photons 112 output by the laser device 116to be scanned across the surface 103. In an alternative implementationof the present disclosure illustrated in FIG. 2, the support system 102may comprise the actuating means 124 for moving the support 122. In suchan implementation, the output of the laser device 116 may remainstationary and the actuating means 124 may adjust the position of thesupport 122, thereby causing the beam of photons 112 output by the laserdevice 116 to be scanned across the surface 103. The actuating means 124for adjusting the position of either the laser device 116 or the support122 may comprise, for example, an X-Y stage, an extension arm and/orrotating shaft capable of translational movement and/or rotationalmovement.

The controller 108 may be connected to the laser device 116 in a mannerthat enables the controller to control various parameters associatedwith the beam of photons 112 output by the laser device 116. Inparticular, the controller 108 may be connected to the laser device 116to control at least the following parameters associated with the beam ofphotons 112: wavelength, pulse width, repetition rate, travel speed,power level, and beam size. By being able to control these variousparameters associated with the beam of photons 112, the controller 108is able to dictate the surface morphology formed on the surface 103 ofthe component 104. It should be understood that “travel speed”incorporates an implementation where the beam of photons 112 is beingmoved and the component 104 is stationary and an implementation wherethe beam of photons 112 is stationary and the component is being moved.As shown in FIG. 2, the controller 108 may also be connected to thesupport system 102 in a manner that enables the controller to control anactuating means 124 connected to the support 122. Alternatively, asecondary controller may be connected to the support system 102 tocontrol an actuating means 124 connected to the support 122.

The controller 108 may be one of any form of general purpose computerprocessor (CPU) that can be used in an industrial setting. The computermay use any suitable memory, such as random access memory, read onlymemory, floppy disk drive, hard disk, or any other form of digitalstorage, local or remote. Various support circuits may be coupled to theCPU for supporting the processor in a conventional manner. Softwareroutines as required may be stored in the memory or executed by a secondCPU that is remotely located. The software routine, when executed,transforms the general purpose computer into a specific process computerthat controls the operation so that a chamber process is performed.Alternatively, the implementation described herein may be performed inhardware, as an application specific integrated circuit or other type ofhardware implementation, or a combination of software or hardware.

The laser device 116 of the laser machine 100 may have a power output ina range of about 3 W to about 30 W. Alternatively, the laser machine mayhave a power output in a range of about 1 W to about 150 W. The laserdevice 116 may also be capable of pulsing and varying parametersassociated with the beam of photons 112 (e.g., wavelength, pulse width,pulse frequency, repetition rate, travel speed, power level, and beamsize), which are discussed more below. The laser device 116 of the lasermachine 100 may be a commercially available laser. An example of acommercially available laser machine that may be in accordance with thepresent disclosure is IPG YLPP laser of Spectral Physics Quanta-RayLaser.

The laser machine 100 and the support system 102 do not require a vacuumenvironment to perform the texturizing process because the output of thelaser device 116 is a beam of photons 112. The output of the laserdevice 116 thus differs from a conventional electromagnetic beamgenerating system in which an electron-beam is used to perform thetexturizing process. An electromagnetic beam system typically requires avacuum environment (e.g., a vacuum chamber) due to the interaction andscattering of the electrons with ambient gas atoms, and thus the vacuumenvironment is necessary to maintain precise control of the electronbeam. As discussed above, the requirement of the vacuum environmentimposes physical constraints on the size of component that can betexturized using the electromagnetic beam system, as the component mustbe able to fit within the vacuum chamber. In addition, the requirementof the vacuum environment increases the complexity of theelectromagnetic system because the vacuum chamber must include specialequipment (e.g., a pump, sensors, seals). Consequently, electromagneticbeam systems have significantly higher capital costs than that whichwould be incurred when using the laser machine 100 and the supportsystem 102 discussed in the present disclosure to perform thetexturizing process.

Thus, the laser machine 100 and the support system 102 can be used in anambient air environment in which the air through which the beam ofphotons 112 passes is approximately 78% nitrogen and approximately 21%oxygen. In some situations, however, it may be desirable to locate thelaser machine 100 and the support system 102 within an oxygen-depletedenvironment. In such a situation, the laser machine 100 and the supportsystem 102 can be positioned within a chamber where nitrogen gas is usedin place of ambient air. Because a vacuum is not required, the pressurewithin the chamber can be maintained at atmospheric pressure. It is tobe understood that “atmospheric pressure” may differ from one locationto another. In some embodiments, the pressure in the region in which thecomponent 104 is disposed during processing may be unregulated.

FIG. 4 depicts a process sequence 200, which begins at 201 and ends with209, for a method of operating the laser machine 100 and the supportsystem 102. At box 202, the component 104 is positioned on the support122. At box 204, a first region 126 is defined on the surface 103 of thecomponent 104. As illustrated in FIG. 3, in which component 104 is a gasdistribution showerhead 133 having a plurality of through-holes 135, thefirst region 126 has a first outer boundary 127 defining the outerbounds of the first region. The first outer boundary 127 defines a firstsurface area. A ratio of the first surface area to a second surface areaof the component 104 may be at least 0.6. The second surface area of thecomponent 104 is defined by a second outer boundary 132 of the surface103 being texturized. Thus, the first surface area, which is positionedwithin the second surface area, may be at least 60% of the secondsurface area. It is to be understood that the size of the first andsecond surface areas will vary depending upon the shape and size of thecomponent 104 that is being texturized. Alternatively, the ratio of thefirst surface area to the second surface area may be greater than 0.7,0.8, and/or 0.9.

At box 206, the laser machine 100 is powered via power supply 106 suchthat the laser device 116 outputs a beam of photons 112. As discussedabove, controller 108 of the laser machine 100 can vary the parametersassociated with the beam of photons 112 depending upon the desiredtexture on the surface 103. In one implementation, the beam of photons112 may have a wavelength in a range between about 345 nm and about 1100nm. In another implementation, the beam of photons may have a wavelengthin the ultra-violet light range (about 170 nm to about 400 nm). In yetanother implementation, the beam of photons may have a wavelength in theinfrared light range (about 700 nm to about 1.1 mm). The beam of photons112 outputted by the laser device 116 is directed towards the surface103 of the component 104 at a position within the first region 126. Thebeam of photons 112 may have a beam diameter at the surface 103 of thecomponent 104 in a range of about 7 μm to about 75 μm. Alternatively,the beam of photons 112 may have a beam diameter at the surface 103 ofthe component 104 in a range of about 2.5 μm to about 100 μm. In oneimplementation, the working distance traveled by the beam of photons 112is about 50 millimeters to about 1,000 millimeters. In anotherimplementation, the working distance traveled by the beam of photons 112is between about 200 millimeters to about 350 millimeters. As the laserdevice 116 of the laser machine 100 may have a power output in a rangeof about 1 W to about 150 W, the beam of photons 112 may have a pulsepower in a range of about 10×10⁻⁶ J to about 400×10⁻⁶ J. The beam ofphotons 112 may have a pulse width in a range between about 10 ps toabout 30 ns. Further, the beam of photons 112 may have a pulserepetition rate in a range between about 10 KHz to about 200 KHz in oneembodiment, and more particularly in a range between about 10 KHz toabout 3 MHz in another embodiment. The controller 108 may be used tocontrol the pulse width and/or the pulse repetition rate of the laserdevice 116.

At box 208, the beam of photons 112 is scanned across the first region126 of the surface 103, thereby forming a plurality of features on thesurface. The beam of photons 112 may be scanned across the first region126 of the surface 103 at a travel speed in a range of about 0.1 m/s toabout 30 m/s, such as while the beam of photons 112 is pulsed from thelaser device 116. As can be seen in FIGS. 5-10, the features that areformed as a result of the beam of photons 112 being scanned across thefirst region 126 of the surface 103 include depressions, protuberances,or combinations thereof. The controller 108 can be programmed to varycertain parameters associated with the beam of photons 112 as the beamis being scanned across the first region 126. For example, thecontroller 108 can pulse the beam of photons 112 while the beam is beingscanned across the first region 126. In one implementation, thecontroller 108 may control the laser device 116 to have a pulse width ina range of about 0.2 ns to about 100 ns. In one embodiment, thecontroller 108 may control the laser device 116 to have a pulse width ina range of about 400 fs to about 200 ns.

In this manner, the laser machine 100 can be used to form an overallsurface morphology for the first region.

Depending upon the situation, the laser machine 100 can be used to formthree different types of surface morphologies for the first region 126.The first surface morphology is a repeating random form, as shown inFIGS. 5 and 6, wherein the repeating random form generates a combinationof protuberances and depressions. It is to be understood that theplurality of protuberances may have, for example, a flat surface and aconvex surface. In FIGS. 5 and 6, the highest variation in elevationfrom the lowest depression to the highest protuberance is in a range ofabout 4,000 nm to about 4,500 nm. Because the surface morphology is arepeating random form, the protuberances and depressions do not form aperiodic wave.

A repeating form may be achieved by synchronizing pulse frequency andscan rate. As the pulsing laser and substrate move with respect to eachother, the laser emits radiation that impacts the substrate surface at arepeating interval, resulting in a repeating form. The exact shape ofthe repeating form can be adjusted by adjusting the temporal profile ofthe laser pulses to the scan rate. If a laser pulse with very fast powerramp time, compared to the scan rate, is used, the repeating form willtend toward a substantially rectangular profile because the substratedoes not translate far during the ramp-up or ramp-down. If ramp time isvery small compared to pulse duration, the repeating form will also tendtoward a substantially rectangular profile because the temporal profileof the laser pulse is substantially flat. If scan rate is low comparedwith pulse duration or ramp time, the repeating form will also tendtoward a substantially rectangular profile because the photons deliveredby each laser pulse are concentrated in a smaller region of thesubstrate. Increasing ramp time and/or scan rate relative to pulseduration will result in more rounded or tapered corners of the formedfeatures. The laser pulses themselves can also be modulated by couplinga waveform generator to the laser power supply. In this way, pulses canbe generated with more tapered ramp rates, and even sinusoidal temporalprofiles. Such measures will result in features that tend toward a waveshape. Feature pitch is determined by the relationship of pulsefrequency to scan rate. Thus, feature pitch can be adjustedindependently by adjusting pulse frequency, which will be limited at thehigh end by pulse duration.

An example of the Ra of the repeating random form shown in FIGS. 5 and 6is about 60 μin when the power output of the laser machine 100 is 30 W,the component 104 is aluminum, and the beam diameter is about 7 μm. Itis to be understood that the Ra value will vary depending upon the poweroutput of the laser machine 100 and the various variables associatedwith beam of photons 112. The repeating random form achieved using thelaser machine 100 may have a similar surface morphology and Ra value tothat which can be achieved using a bead blasting process, with theexception that use of the laser machine 100 will avoid some of theproblems inherent with the bead blasting process. For example, if thecomponent 104 is a gas distribution showerhead 133 (illustratedschematically in FIG. 3), there will be plurality of through-holes 135that are tapered. As discussed above, the bead blasting process involvesblasting a plurality of beads at the surface to be textured at a highvelocity. Consequently, there is an inherent lack of control andprecision associated with the bead blasting process.

Beads used in the bead blasting process may also become entrapped orembedded within the through-holes 135. Additionally, the beads maystrike a corner or edge of the through-holes 135, undesirably alteringthe profile of the through-holes rather than texturizing surface 103.Using the laser machine 100 to texturize the gas distribution showerhead133 with the repeating random form surface morphology will not alter theboundary profile of the through-holes 135 in the showerhead 133 assignificantly because of the higher precision that can be achievedthrough this texturing process. The laser machine 100 may texturizesurface 103 within the first region 126 such that repeating random formcontinually repeats itself within first outer boundaries 127.

The second surface morphology is a repeating wave form, as shown inFIGS. 7 and 8, wherein the repeating wave form generates a combinationof protuberances and depressions. It is to be understood that theplurality of protuberances may have, for example, a generally convexsurface. In FIGS. 7 and 8, the highest variation in elevation from thelowest depression to the highest protuberance is in a range of about4,000 nm to about 4,500 nm. Because the surface morphology is arepeating wave form, the protuberances and depressions form a periodicprofile where each of the plurality of protuberances come to a generallyconvex, pointed portion. The periodic profile associated with therepeating wave form repeats itself throughout the first region 126 ofthe surface 103 along both an x-axis of the surface and a y-axis of thesurface.

An example of the arithmetic average of the roughness profile (Ra) ofthe repeating wave form shown in FIGS. 7 and 8 is about 108 μin when thepower output of the laser machine 100 is 30 W, the component 104 isaluminum, and the beam diameter is about 7 μm. It is to be understoodthat the Ra value will vary depending upon the power output of the lasermachine 100 and the various variables associated with beam of photons112. Unlike the repeating random form, the repeating wave form differsfrom the surface morphology typically achieved using the bead blastingprocess. The laser machine 100 may texturize surface 103 within thefirst region 126 such that repeating wave form continually repeatsitself within first outer boundaries 127.

The third surface morphology is a repeating square form, as shown inFIGS. 9 and 10, wherein the repeating square form generates acombination of protuberances and depressions. It is to be understoodthat the plurality of protuberances may have, for example, a generallyflat surface. In FIGS. 9 and 10, the highest variation in elevation fromthe lowest depression to the highest protuberance is in a range of about4,000 nm to about 4,500 nm. Because the surface morphology is arepeating square form, the protuberances and depressions form a periodicprofile where each of the plurality of protuberances comes to agenerally flat portion. The periodic profile associated with therepeating square form repeats itself throughout the first region 126 ofthe surface 103 along both an x-axis of the surface and a y-axis of thesurface.

An example of the arithmetic average of the roughness profile (Ra) ofthe repeating square form shown in FIGS. 9 and 10 is about 357 μin whenthe power output of the laser machine 100 is 30 W, the component 104 isaluminum, and the beam diameter is about 25 μm. It is to be understoodthat the Ra value will vary depending upon the power output of the lasermachine 100 and the various variables associated with beam of photons112. The repeating square form may be particularly applicable when thecomponent 104 is an electrostatic chuck. As best seen in FIG. 9, theprotuberances and depressions within the repeating square form result ina plurality of passageways. The plurality of passageways enable gas tobe passed through the passageways underneath a silicon wafer, forexample, that is sitting on top of the electrostatic chuck during waferprocessing.

A subsequent polishing process may be performed after the texturizingprocess to help planarize top surfaces of the protuberances, therebyhelping the adhesion of the silicon wafer to the electrostatic chuckduring wafer processing. The portion of the component 104 not planarizedduring the polishing process will retain a surface roughness, therebyaiding in the prevention of detachment of foreign matter that hascondensed within the plurality of passageways during wafer processing.The laser machine 100 may texturize surface 103 within the first region126 such that repeating square form continually repeats itself withinfirst outer boundaries 127.

Another benefit associated with the use of the laser machine 100 is thatthe surface 103 of the component 104 that is being texturized does nothave to undergo a precision pre-cleaning process before box 202 of theprocess. Instead, all that is required is a rough pre-cleaning processto degrease the surface 103 of the component 104. This differs from anelectromagnetic beam system, in which a precision pre-cleaning processis generally required because of the highly reactive nature of theelectron beam.

Yet another benefit associated with the use of laser machine 100 totexturize the surface 103 of the component 104 is that after box 202,there is not an additional step of pumping down the pressure within avacuum chamber, as is the case when an electromagnetic beam system isbeing used. As discussed above, the electromagnetic beam system isoperated within a vacuum environment, thereby requiring the pressure ofthe environment to be pumped down. While laser machine 100 and supportsystem 102 may be positioned within a chamber for the purpose ofcreating an oxygen-depleted environment, the environment pressure doesnot have to be pumped down. Because this pumping down step iseliminated, the time required to texturize the surface 103 of component104 with the laser machine 100 is less than the time required totexturize the surface of the component with an electron beam. This helpsincrease the throughput associated with texturizing the surface ofcomponents with the laser machine 100 as compared to texturizing thesurface of components using an electromagnetic beam system. Thethroughput associated with the laser machine 100 is also greater thanthe throughput associated with using an electromagnetic beam systembecause the travel speed at which an electron beam can be scanned acrossa surface to form a plurality of features is significantly less than thetravel speed at which the beam of photons 112 can be scanned across thesurface. For example, the travel speed of an electron beam is in a rangeof about 0.02 M/s about 0.03 M/s when texturizing a surface. Asdiscussed above, the travel speed of the beam of photons 112 has a rangeof about 0.1 M/s to about 300 M/s when texturizing a surface.

Another benefit associated with texturizing the surface 103 of thecomponent 104 utilizing the beam of photons 112 output by the laserdevice 116 is that it may create a cleaner process than using, forexample, bead blasting or an electron beam. Depending upon thewavelength of the beam of photons 112, the material of the surface 103on which the beam of photons is directed may receive primarily opticalradiation or thermal energy to modify the surface. The optical radiationmelts the surface 103 of the component 104 at the location on which thebeam of photons is directed, thereby creating molten material or slagthat, when re-solidified, creates either a depression or protuberance.Because kinetic energy associated with the molten material can beminimalized, the molten material is less likely to be knocked from theremaining surface 103 and redeposited at some other location. Thisreduces the amount of re-deposition that might otherwise occur.Conversely, when using an electromagnetic beam system, the componentbeing texturized is often embedded with electrons that interact with theelectron beam, creating significant energy that results in at least someof the molten material being knocked from the remaining surface andthereby increasing the likelihood of re-deposition. Consequently,texturizing a surface with the beam of photons 112 may result in acleaner process than texturizing a surface with an electron beam.

It is to be noted that the beam of photons 112 delivered to the surface103 of the component 104 by the laser device 116 is not intended tocause significant or gross distortion (e.g., melting, warping, cracking,etc.) of the component 104. Significant or gross distortion of thecomponent 104 can be generally defined as a state where the component104 is not able to be used for its intended purpose due to theapplication of the texturizing process.

FIGS. 11 and 12 depict schematic views of laser machines 100 that may beused to texturize the surface 103 of the component 104. In particular,FIGS. 11 and 12 show different arrangements, parts, and elements for thelaser machine 100 and/or the laser device 116. As shown in FIG. 11, thelaser machine 100 may have a vertical orientation with respect to thecomponent 104, or the laser device 116 may have a horizontal orientationwith respect to the component 104, as shown in FIG. 12. As discussedabove, the component 104 is used in a semiconductor processing chamber.The component 104 may be, for example, a gas distribution showerhead, ashield, a chamber liner, a cover ring, a clamp ring, a substrate supportpedestal, and/or an electrostatic chuck. Thus, after being texturizedwith the laser machine 100, the component 104 is used as a component ofthe semiconductor processing chamber, in which semiconductors, such aswafers, are processed within the semiconductor processing chamber.

As discussed above, the laser device 116 is used to output a beam ofphotons. The laser device 116 in FIGS. 11 and 12 is shown to include alight source 142, such as a photon light source, an optical module 144,and a lens 146, each operably coupled to each other. However, in otherembodiments, though the laser device 116 is shown as including the lightsource 142, the optical module 144, and the lens 146, the presentdisclosure is not so limited. For example, in one or more otherembodiments, the power supply 106 and/or the controller 108 shown inFIGS. 1 and 2 may additionally or alternatively include the light source142, the optical module 144, and/or the lens 146 without departing fromthe scope of the present disclosure.

The light source 142 is used to generate a source of light, and inparticular a stream of photons in this embodiment. The optical module144 operably coupled to the light source 142 receives the stream ofphotons from the light source 142 to shape, direct, or otherwisemodulate the stream of photons from the light source 142. The opticalmodule 144 includes a beam modulator and a beam scanner with the beamscanner positioned downstream (with respect to the light source 142)from the beam modulator. The beam modulator receives the stream ofphotons from the light source 142 to create a beam of photons from thestream of photons. For example, the beam modulator may be used to createa beam of photons with a single focal point by shaping the stream ofphotons from the light source 142. The beam scanner is used to receivethe beam of photons from the beam modulator to scan the beam of photonsacross the surface 103 of the component 104. Thus, the beam scanner isused to move, deflect, and otherwise control the direction of the beamof photons, such as through the use of an electromechanical actuator.

The lens 146 is used to receive the beam of photons from the opticalmodule 144, and more particularly from the beam scanner, to distributethe beam of photons across the surface 103 of the component 104. As thebeam modulator of the optical module 144 is used to focus the stream ofphotons into a beam of photons, such as a single focal point beam ofphotons, the lens 146 is used to defocus and equally distribute the beamof photons across a predetermined area or region. For example, the lens146 may be used to distribute the beam of photons across an area ofabout 355 mm². The beam of photons distributed across the surface 103 ofthe component 104 is used to form one or more texturized features on thesurface 103 of the component 104, such as depressions and/orprotuberances on the surface 103 of the component 104.

The laser device 116 is used to control the power, speed, frequency,direction, distribution, and/or pulse(s) of the beam of photons emittedfrom the laser device 116 and scanned across the surface 103 of thecomponent 104. For example, the light source 142 and/or the opticalmodule 144 may be used to pulse the beam of photons while the beam ofphotons are scanned across the surface 103 of the component 104.Further, the beam scanner of the optical module 144 may be used todirect or scan the beam of photons across the surface 103 of thecomponent 104 in one or more predetermined patterns. In one embodiment,the beam scanner may be used to scan the beam of photons using aline-by-line pattern, a sparrow pattern, and/or a random pattern. Asparrow pattern includes scanning the beam of photons in an out-to-in oran in-to-out pattern with respect to a middle or central region of thesurface 103 of the component 104, thus working in a radial pattern asopposed to a line-by-line pattern.

The laser device 116 is also used to distribute and scan the beam ofphotons vertically or horizontally from the lens 146 and towards thesurface 103 of the component 104. A support 122 that includes asupporting surface 190 is shown in use with the laser machine 100 withthe component 104 positioned between the lens 146 and the support 122.The supporting surface 190 is used to support the component 104 on thesupport 122, and thus the component 104 is positioned on the supportingsurface 190 of the support 122 in the arrangement shown in FIG. 11 inwhich the beam of photons is distributed vertically towards the surface103 of the component 104. The supporting surface 190 of the support 122is used as a barrier behind the component 104 in the arrangement shownin FIG. 12 in which the beam of photons is distributed horizontallytowards the surface 103 of the component 104. An advantage to thehorizontal arrangement shown in FIG. 12 is that gravity may be used topull material away from the surface 103 of the component 104, such aswhen the material melts. This may result in a cleaner process than whenmaterial is able to redeposit or form on the surface.

Referring still to FIGS. 11 and 12, a clean enclosure 150 or cleancompartment is included for use with the laser machine 100. The cleanenclosure 150 generally includes a processing region 151 in which thesupport 122 is disposed. For example, the component 104 is positionedwithin the clean enclosure 150 during the texturizing process, in whichthe processing region 151 of the clean enclosure 150 includes afiltration system that is able to maintain the processing region as aClass 1 environment in accordance with the classification parametersfrom ISO 14644-1. Further, the support 122 and at least a portion of thelaser device 116, such as the lens 146, are positioned within the cleanenclosure 150. As the laser machine 100 is used within a non-pressurized(e.g., atmospheric) environment, the pressure within the clean enclosure150 may be generally equivalent to or about atmospheric pressure, or thepressure may be unregulated. The clean enclosure 150 may alternatelyand/or additionally be purged with an inert gas (e.g., N₂) to removeoxygen, water and/or other process contaminants. Additionally, aconveyor may be used to introduce the component 104 into the cleanenclosure 150 and onto the support 122, and/or the conveyor may be usedto remove the component 104 from the support 122 and out of the cleanenclosure 150. For example, the support 122 may include the conveyor insuch an embodiment. Alternatively, a separate robot arm or similarmechanism may be used to facilitate removing the component 104 from theconveyor and/or placing the component 104 on the conveyor.

FIG. 13 shows a graphical view comparing average elemental results ofcomponents that have been texturized using a bead blasting process 302,components that have been texturized using a laser process 304 inaccordance with embodiments described herein, and a specification 306generally required for components used within a semiconductor processingchamber. The x-axis provides the different elements (e.g., trace metals)tested in each of the components, and the y-axis provides the amount ofthe elements found on the surface of the component in units ofatoms/cm². As shown, a component texturized using the laser process 304generally had less elements or trace metals than those required by thespecification 306, and also generally had less elements or trace metalsthan those texturized using the bead blasting process 302. For example,as beads used in the bead blasting process 302 generally include sodium(Na), there was a significant decrease in the amount of sodium forcomponents texturized using the laser process 304 as opposed to the beadblasting process 302. Components texturized using the laser process 304may generally result in having a higher amount of magnesium (Mg), butthese components can subsequently be cleaned using diluted acid and highpurity water (e.g., hot deionized water) to remove the excess magnesium.Accordingly, components texturized using the laser process 304 resultedin higher yields during subsequent semiconductor processing, such asaround 95%, compared to components texturized using the bead blastingprocess 302, which could be expected to be around 50%.

While the foregoing is directed to implementation of the presentdisclosure, other and further implementation of the disclosure may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

What is claimed is:
 1. A component for use in a semiconductor processingchamber, the component comprising: a surface, the surface comprising oneor more holes, a first surface area defined by a first outer boundary,and a second surface area defined by a second outer boundary, whereinthe first surface area is smaller than the second surface area; and aplurality of features formed on the surface within the first outerboundary, wherein the plurality of features are formed using a beam ofphotons scanned across the surface.
 2. The component of claim 1, whereinthe plurality of features comprise depressions, protuberances, orcombinations thereof.
 3. The component of claim 1, wherein the beam ofphotons is pulsed while scanned across the surface to form the pluralityof features.
 4. The component of claim 1, wherein a ratio of the firstsurface area to the second surface area is at least 0.6.
 5. Thecomponent of claim 1, wherein the plurality of features are of a surfacemorphology, and the surface morphology is a repeating random form, arepeating wave form, or a repeating square form.
 6. The component ofclaim 1, wherein the component comprises an electrostatic chuck.
 7. Agas distribution showerhead for use in a semiconductor processingchamber, the gas distribution showerhead comprising: a surface, thesurface comprising one or more holes, a first surface area defined by afirst outer boundary, and a second surface area defined by a secondouter boundary, wherein the first surface area is smaller than thesecond surface area; and a plurality of features formed on the surfacewithin the first outer boundary, wherein the plurality of features areformed using a beam of photons scanned across the surface.
 8. The gasdistribution showerhead of claim 7, wherein the plurality of featurescomprise depressions, protuberances, or combinations thereof.
 9. The gasdistribution showerhead of claim 7, wherein the beam of photons ispulsed while scanned across the surface to form the plurality offeatures.
 10. The gas distribution showerhead of claim 7, wherein aratio of the first surface area to the second surface area is at least0.6.
 11. The gas distribution showerhead of claim 7, wherein theplurality of features are of a surface morphology, and the surfacemorphology is a repeating random form, a repeating wave form, or arepeating square form.
 12. A method of providing a texture to a surfaceof a component for use in a semiconductor processing chamber,comprising: generating a stream of photons; shaping the stream ofphotons into a beam of photons; scanning the beam of photons through aprocessing region that comprises a gas concentration of ambient air ornitrogen with a pressure generally equivalent to atmospheric pressuretowards the surface of the component, the surface of the componentcomprising one or more holes, a first surface area defined by a firstouter boundary, and a second surface area defined by a second outerboundary, wherein the first surface area is smaller than the secondsurface area; and distributing the beam of photons across the surface ofthe component to form a plurality of features on the surface within thefirst outer boundary.
 13. The method of claim 12, further comprisingassembling the semiconductor processing chamber with the component. 14.The method of claim 13, further comprising processing a semiconductorwithin the semiconductor processing chamber.
 15. The method of claim 12,further comprising positioning the component within an enclosuremaintained as a Class 1 environment.
 16. The method of claim 15, whereinthe positioning comprises using a conveyor to convey the component intothe Class 1 environment.
 17. The method of claim 12, wherein thedistributing comprises distributing the beam of photons horizontallytowards the surface of the component.
 18. The method of claim 12,wherein the distributing the beam of photons comprises pulsing the beamof photons while scanning the beam of photons across the surface of thecomponent.
 19. The method of claim 12, wherein the beam of photonscomprises a wavelength in a range between about 345 nm and about 1100nm.
 20. The method of claim 12, wherein the plurality of features thatare formed comprise depressions, protuberances, or combinations thereof.